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Proceedings Paper

Relaxation mechanism of SiGe thin film on SOI substrate
Author(s): Zengfeng Di; Miao Zhang; Weili Liu; Ming Zhu; Chenglu Lin; Paul K. Chu
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Paper Abstract

A different annealing method for the Si/SiGe bilayer fabricated on SIMOX wafer is proposed. After annealing for a short time, the Si/SiGe bilayer relaxes via the gliding motion of dislocations in the Si layer exclusively, leaving the top SiGe layer relaxed and mostly dislocation free. In addition, Ge does not diffuse into the top Si layer of SOI substrate to assist in the relaxation of the structure at the highest annealing temperature. At low annealing temperature, SiO2 is not expected to be viscous, and so the strain ratio is reduced in a linear fashion between 600°C and 900°C. When the annealing temperature becomes higher (for instance, 1000°C that is 58.5% of its melting point of 1710°C), the oxide can flow and the Si/SiGe bilayer behaves like a constrained thin foil slipping on the oxide. In this case, the strain ratio is dramatically reduced.

Paper Details

Date Published: 8 December 2004
PDF: 5 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607906
Show Author Affiliations
Zengfeng Di, Shanghai Institute of Microsystem and Information Technology, CAS (China)
City Univ. of Hong Kong (Hong Kong China)
Miao Zhang, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Weili Liu, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Ming Zhu, Shanghai Institute of Microsystem and Information Technology, CAS (China)
City Univ. of Hong Kong (Hong Kong China)
Chenglu Lin, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Paul K. Chu, City Univ. of Hong Kong (Hong Kong China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications

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