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Proceedings Paper

Transfer bonding of thick silicon nitride film via split of porous silicon
Author(s): X. Q. Bao; Yan Fang Ding; Yu Chen; Ping Sheng Guo; Yan Ling Shi; Lian Wei Wang; Zong Shen Lai
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Paper Abstract

In this paper, silicon nitride film, as thick as 1.1μm, was first deposited on porous silicon by plasma enhanced chemical vapor deposition (PECVD). No crack was detected, on the contrary of the case that is deposited on a single crystalline thin film. Such layer was bonded to a glass substrate via a media of optical epoxy. And finally, separation of such layer from the original silicon substrate via splitting of porous silicon was investigated and the transmission properties before and after transfer bonding process were investigated. It is shown that such a transfer bonding process can be a good solution to the attenuation problem in silicon based RF system.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607898
Show Author Affiliations
X. Q. Bao, East China Normal Univ. (China)
Yan Fang Ding, East China Normal Univ. (China)
Yu Chen, East China Normal Univ. (China)
Ping Sheng Guo, East China Normal Univ. (China)
Yan Ling Shi, East China Normal Univ. (China)
Lian Wei Wang, East China Normal Univ. (China)
Zong Shen Lai, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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