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Proceedings Paper

Resolution enhancement in optical lithography using polarized film mask
Author(s): Guobin Yu; Wumei Lin; Xianzhong Chen; Tingwen Xing; HanMin Yao
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Paper Abstract

The influence of polarization on the image performance of optical lithography systems has been systematically investigated through comparing the image contrast and the process window with TE-polarization, TM-polarization and un-polarized light, respectively. The simulation results show that the TE-polarization imaging is possible to improve the image performance of optical lithography systems, especially for those systems with high numerical aperture. The effects of polarized-light imaging with a conventional masks and a polarized film mask were studied by carrying out series of experiments under the conditions: 436nm exposure wavelength, numerical aperture of 0.5 and partial-coherence factor of 0.2. It is found that the image quality of the L&S patterns with the polarized film mask is better than that of with the conventional mask and, 0.3 μm L&S patterns are obtained with the polarized film mask.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607807
Show Author Affiliations
Guobin Yu, Institute of Optics and Electronics, CAS (China)
Wumei Lin, Institute of Optics and Electronics, CAS (China)
Xianzhong Chen, Institute of Optics and Electronics, CAS (China)
Tingwen Xing, Institute of Optics and Electronics, CAS (China)
HanMin Yao, Institute of Optics and Electronics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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