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Proceedings Paper

Formation of the copper nanoparticles in porous silicon by electroplating
Author(s): Xiao Feng; Shaohui Xu; Shaoqiang Chen; Jianzhong Zhu; Ziqiang Zhu; Zongshen Lai
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Paper Abstract

A cheap and simple method of depositing copper into porous silicon by cathode electroplating was described. The existence of cubic copper nano-particles (~30nm) into porous silicon matrix was verified by X-ray Diffraction and Scanning Electron Microscopy. The microcrystal size of porous silicon and strain between porous silicon and copper layer were discussed based on the Raman spectra.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607806
Show Author Affiliations
Xiao Feng, East China Normal Univ. (China)
Shaohui Xu, East China Normal Univ. (China)
Shaoqiang Chen, East China Normal Univ. (China)
Jianzhong Zhu, East China Normal Univ. (China)
Ziqiang Zhu, East China Normal Univ. (China)
Zongshen Lai, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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