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Proceedings Paper

Thickness effect of LaNiO3 buffer layer on microstructure and electrical properties of PZT thin films
Author(s): Wenjuan Du; Wei Lu; Jinrong Cheng; Zhongyan Meng
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Paper Abstract

The thickness effects of (LaNiO3) LNO buffer layer on microstructure and electrical properties of PZT thin films were investigated. XRD patterns show that the orientation of PZT films directly prepared on the random-oriented Pt coated substrates exhibits random orientation, and that the PZT films with buffer layer reveal (100) preferred orientation to match with the (100)-oriented LNO buffer layer. Moreover, (100) orientability arises higher and the grain size becomes smaller with increasing thickness of LNO layer. As a result, the higher dielectric constant is obtained. The improvement of fatigue behaviors is due to that LNO thin films can alleviate the oxygen vacancy accumulation at the ferroelectric-electrode interface.

Paper Details

Date Published: 8 December 2004
PDF: 5 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607754
Show Author Affiliations
Wenjuan Du, Shanghai Univ. (China)
Wei Lu, Shanghai Univ. (China)
Jinrong Cheng, Shanghai Univ. (China)
Zhongyan Meng, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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