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Proceedings Paper

The studies of RT electrical resistivities of LaNiO3-δthin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures
Author(s): X. D. Zhang; Xiang Jian Meng; Jing Lan Sun; Gen Shui Wang; Tie Lin; Jun Hao Chu
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Paper Abstract

Electrically conductive LaNiO3-δthin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La2NiO4 and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607751
Show Author Affiliations
X. D. Zhang, Shanghai Institute of Technical Physics (China)
Xiang Jian Meng, Shanghai Institute of Technical Physics (China)
Jing Lan Sun, Shanghai Institute of Technical Physics (China)
Gen Shui Wang, Shanghai Institute of Technical Physics (China)
Tie Lin, Shanghai Institute of Technical Physics (China)
Jun Hao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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