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Proceedings Paper

Ferroelectricity of BiFeO3 prepared by the chemical solution deposition method
Author(s): Caixia Yang; Yinyin Lin; Ting-ao Tang
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Paper Abstract

Bismuth ferric thin films were fabricated on Pt/Ti/SiO2/Si substrates by the chemical solution deposition Technique. The films were annealed at different temperature using a rapid thermal processor. DTA-TG and DSC-TG were used to study the reaction and crystallization during the process. The influence of the preheated process and annealing temperature on the structure and the morphology of the film were discussed. XRD and SEM were employed to investigate the crystal structure and the phase of the films annealed at different temperatures. The pure phase BiFeO3 thin films were obtained when the film was annealed under the temperature of 800°C. Saturated ferroelectric hysterersis loops are observed. The spontaneous polarization and remnant polarization are 6.9μC/cm2 and 2.8μC/cm2 respectively.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607631
Show Author Affiliations
Caixia Yang, Fudan Univ. (China)
Yinyin Lin, Fudan Univ. (China)
Ting-ao Tang, Fudan Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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