Share Email Print
cover

Proceedings Paper

Study on the stress of silicon nitride thin films prepared by PECVD
Author(s): Ying Yu; Zongzi Luo; Xinqiao Weng
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The residual stresses on silicon nitride thin films that were fabricated by PECVD were studied in this paper. A wafer-curvature measurement method was used to determine the stresses of silicon nitride films. The structure of fixed-fixed beam was also developed to compare with the stress measurement. The contributions of processing parameters on the stress of silicon nitride films were analyzed.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607626
Show Author Affiliations
Ying Yu, Fuzhou Univ. (China)
Zongzi Luo, Xiamen Univ. (China)
Xinqiao Weng, Xiamen Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications

© SPIE. Terms of Use
Back to Top