Share Email Print

Proceedings Paper

Advancements in HgCdTe VLWIR materials
Author(s): Angelo S. Gilmore; J. Bangs; A. Gerrish; A. Stevens; B. Starr
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Raytheon Vision Systems has achieved significant improvements in VLWIR (very long wavelength infrared) detector materials. These small bandgap detector materials are susceptible to tunneling of carriers across the bandgap via either band-to-band or trap-assisted tunneling phenomena. RVS' new procedures reduce exposure of the highly sensitive p-n junction to possible contamination sources during growth and processing. This reduction in impurities reduces the tunneling component of the detector current and yields high quality detectors out to the VLWIR range. Evidence of a highly uniform detector fabrication process is detailed within spanning the LWIR to VLWIR wavelength range.

Paper Details

Date Published: 31 May 2005
PDF: 8 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.607604
Show Author Affiliations
Angelo S. Gilmore, Raytheon Vision Systems (United States)
J. Bangs, Raytheon Vision Systems (United States)
A. Gerrish, Raytheon Vision Systems (United States)
A. Stevens, Raytheon Vision Systems (United States)
B. Starr, Raytheon Vision Systems (United States)

Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

© SPIE. Terms of Use
Back to Top