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Proceedings Paper

Durable coatings for IR windows
Author(s): Lee M. Goldman; Santosh K. Jha; Nilesh Gunda; Rick Cooke; Neeta Agarwal; Suri A. Sastri; Alan Harker; Jim Kirsch
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Paper Abstract

Durable coatings of silicon-carbon-oxy-nitride (a.k.a. SiCON) are being developed to protect high-speed missile windows from the environmental loads during flight. Originally developed at Rockwell Scientific Corporation (RSC) these coatings exhibited substantial promise, but were difficult to deposit. Under a DoD DARPA SBIR Phase I program, Surmet Corporation, working closely with RSC, is depositing these coatings using an innovative vacuum vapor deposition process. High rate of coating deposition and the ease of manipulating the process variables, make Surmet’s process suitable for the deposition of substantially thick films (up to 30 μm) with precisely controlled chemistry. Initial work has shown encouraging results, and the refinement of the coating and coating process is still underway. Coupons of SiN and SiCON coatings with varying thickness on a variety of substrates such as Si-wafer, ZnS and ALON were fabricated and used for the study. This paper will present and discuss the results of SiN and SiCON coatings deposition and characterization (physical, mechanical and optical properties) as a basis for evaluating their suitability for high speed missile windows application.

Paper Details

Date Published: 18 May 2005
PDF: 12 pages
Proc. SPIE 5786, Window and Dome Technologies and Materials IX, (18 May 2005); doi: 10.1117/12.607597
Show Author Affiliations
Lee M. Goldman, Surmet Corp. (United States)
Santosh K. Jha, Surmet Corp. (United States)
Nilesh Gunda, Surmet Corp. (United States)
Rick Cooke, Surmet Corp. (United States)
Neeta Agarwal, Surmet Corp. (United States)
Suri A. Sastri, Surmet Corp. (United States)
Alan Harker, Rockwell Scientific Co. (United States)
Jim Kirsch, U.S. Army RDECOM (United States)


Published in SPIE Proceedings Vol. 5786:
Window and Dome Technologies and Materials IX
Randal W. Tustison, Editor(s)

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