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Proceedings Paper

An integrated self-masking technique for providing low-loss metallized RF MEMS devices in a polysilicon only MEMS process
Author(s): John M. Wilson; Rizwan Bashirullah; David P. Nackashi; David A. Winick; Paul D. Franzon
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Paper Abstract

A novel masking technique that enables the complex patterning of metal on any layer of a released MEMS chip is demonstrated. This technique enables a polysilicon only MEMS process to create low-loss RF devices. To illustrate the advantages of post-release metallization, in a polysilicon only MEMS process, a rotating MEMS tunable capacitor that provides a wide and linear tuning range is presented. The core of the design comes from high yield, mechanically proven gear designs from Sandia’s SUMMiT design library. Significant alterations were made to the gear structure to create the final device. Preliminary tests show device capacitance ratios of 1.8:1, with linear tuning. Increased metal deposition to reduce the device air gap, can produce a capacitance ratio over 6:1.

Paper Details

Date Published: 1 July 2005
PDF: 15 pages
Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); doi: 10.1117/12.607592
Show Author Affiliations
John M. Wilson, North Carolina State Univ. (United States)
Rizwan Bashirullah, Univ. of Florida (United States)
David P. Nackashi, North Carolina State Univ. (United States)
David A. Winick, North Carolina State Univ. (United States)
Paul D. Franzon, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 5836:
Smart Sensors, Actuators, and MEMS II
Carles Cane; Jung-Chih Chiao; Fernando Vidal Verdu, Editor(s)

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