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Proceedings Paper

Doped (AlxGa1-x)0.5In0.5P alloys grown by MOCVD
Author(s): Zhonghui Li; Hanben Niu
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Paper Abstract

Doped (AlxGa1-x)0.5In0.P alloys were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). It was demonstrated that the Zn-doped concentration in AlGaInP alloys was increased with the reducing of growth temperature and Al composition and the enhancing of dimethylzinc (DEZn) flow rate, also, the Si-doped concentration was reduced as the rising of growth temperature and silane (SiH4) flow rate.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607557
Show Author Affiliations
Zhonghui Li, Shenzhen Univ. (China)
Tianjin Univ. (China)
Changchun Univ. of Science and Technology (China)
Hanben Niu, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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