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Proceedings Paper

Study on the structure and ferroelectric properties of sol-gel-derived Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films
Author(s): Aiyun Liu; Xiangjian Meng; Jinglan Sun; Jun-Hao Chu
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Paper Abstract

92%Pb(Mg1/3Nb2/3)O3-8%PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffered layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with some amounts of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffered layer. Electrical properties of the PMNT thin films are highly improved by using the buffered layer LNO. It is found that the remanent polarization (Pr) and the dielectric constant for the PMNT film with a LNO buffered layer are larger than that for the film without a LNO buffered layer.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607553
Show Author Affiliations
Aiyun Liu, Shanghai Institute of Technical Physics, CAS (China)
Xiangjian Meng, Shanghai Institute of Technical Physics, CAS (China)
Jinglan Sun, Shanghai Institute of Technical Physics, CAS (China)
Jun-Hao Chu, Shanghai Institute of Technical Physics, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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