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Third generation and multicolor IRFPA developments: a unique approach based on DEFIR
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Paper Abstract

For preparing future military and industrial needs, SOFRADIR is working with CEA-LETI/LIR in the frame of DEFIR (Design of Excellence for the Future of InfraRed), on the third generation R&D mainly based on HgCdTe (MCT) material growth by Molecular Beam Epitaxy (MBE). Based on MCT grown by MBE, large wafers (4 inches and more) are available on Germanium in France and on Silicon in the USA. MBE process on alternative materials like Germanium, are in position to replace CZT homo-substrates and to compete with other material candidates. This enables very larger wafer size (4" and more) with a well-mastered thickness of the sensitive thin film deposition leading to very low cost 2D MCT arrays. In addition multi spectral arrays including advanced photodiode technologies are developed thanks to the MBE process. Therefore third generation IR detector studies in progress at DEFIR concern very large format sizes including small pixel pitch and high performance and mainly multi spectral and multi-color FPAs. New development results are presented and future trends are discussed.

Paper Details

Date Published: 31 May 2005
PDF: 16 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.607544
Show Author Affiliations
Philippe Tribolet, SOFRADIR (France)
Gerard Destefanis, LETI/CEA.G-DOPT (France)

Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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