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Proceedings Paper

Fabrication of SiGe-on-insulator and applications for strained Si
Author(s): Chenglu Lin; Weili Liu; Zhenghua An; Zengfeng Di; Miao Zhang
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Paper Abstract

SiGe-On-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing at 800°C+1350°C. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation, Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.

Paper Details

Date Published: 8 December 2004
PDF: 6 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607473
Show Author Affiliations
Chenglu Lin, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Weili Liu, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Zhenghua An, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Zengfeng Di, Shanghai Institute of Microsystem and Information Technology, CAS (China)
Miao Zhang, Shanghai Institute of Microsystem and Information Technology, CAS (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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