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Proceedings Paper

Efficient field emission from porous silicon
Author(s): Yongsheng Zhang; Ke Yu; Laiqiang Luo; Ziqiang Zhu
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Paper Abstract

Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristics of the films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm2 was obtained. The emission current density from the PS films reached 1mA/cm2 under a applied field of about 12.5V/μm. The experimental results demonstrate that the PS films have great potential applications for flat panel displays.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607469
Show Author Affiliations
Yongsheng Zhang, East China Normal Univ. (China)
Luoyang Technology College (China)
Ke Yu, East China Normal Univ. (China)
Shandong Univ. (China)
Laiqiang Luo, East China Normal Univ. (China)
Ziqiang Zhu, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications

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