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Proceedings Paper

Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer
Author(s): Yun Liu; Yanling Shi; Xiao Feng; Yong Wang; Shaoqiang Chen; Xiaojin Li; Ziqiang Zhu; Zongshen Lai
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Paper Abstract

Oxidized porous silicon/porous silicon (OPS/PS) has been introduced as a low-loss substrate for an on-chip LC low-pass filter (LPF). The LPF is optimally designed with midband insertion loss (MIL) of -4.5dB and nominal cutoff frequency at 900MHz. The fabrication of the LPF based OPS/PS is in prevailing CMOS process. Experiments show that the performance of the LPF has been greatly improved with MIL of -4.54dB that meets the designed value quite well. And in comparison with MIL of LPF on SiO2/Si (8Ω cm), MIL with the proposed interlayer is lowered by 8dB, which implies that the microwave loss resulting from the substrate part can be substantially suppressed by introducing OPS/PS.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607442
Show Author Affiliations
Yun Liu, East China Normal Univ. (China)
Yanling Shi, East China Normal Univ. (China)
Xiao Feng, East China Normal Univ. (China)
Yong Wang, East China Normal Univ. (China)
Shaoqiang Chen, East China Normal Univ. (China)
Xiaojin Li, East China Normal Univ. (China)
Ziqiang Zhu, East China Normal Univ. (China)
Zongshen Lai, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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