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Proceedings Paper

Photovoltaic feature of boron-doped nanocrystalline carbon films on silicon
Author(s): Z. Q. Ma; Q. Zhang
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Paper Abstract

Boron-doped diamond-like carbon (B-DLC) thin films were deposited on n-type silicon (100) substrates by arc-discharge plasma chemical vapor deposition (arc-PCVD) technique, followed by a deposition of TiNx (0.8 < x < 1.1) mark on top of the carbon films to form heterojunction devices. The crystallinity of the carbon film was confirmed to be a mixing of sp3/sp2 coordination with nanocrystalline diamond grains embedded in the amorphous network. The performance of TiNx / p-C (B) / n-Si / AuSb heterojunction cells has been evaluated under dark I-V rectifying curve and I-V working curve with a proper illumination. At higher boron content the films exhibited a high internal conductivity and an overall phase-related character. The TiNx exhibited an excellent ohmic contact behavior as a metallic electrode of the devices.

Paper Details

Date Published: 8 December 2004
PDF: 5 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607381
Show Author Affiliations
Z. Q. Ma, Shanghai Univ. (China)
Q. Zhang, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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