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Proceedings Paper

Formation of GaAs hollow above InAs quantum dots
Author(s): Hua Han Zhan; Jun Yong Kang
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Paper Abstract

GaAs hollow nanostructure is constructed above low-temperature (250°C) InAs quantum dots after a thin GaAs layer capping at 480°C. The hollows mostly disappeared after the high temperature annealing at 580°C. The formation mechanism is simply discussed.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607378
Show Author Affiliations
Hua Han Zhan, Xiamen Univ. (China)
Jun Yong Kang, Xiamen Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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