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Proceedings Paper

Fabrication and characteristics of PLZT thin films derived from MOD process
Author(s): Yong Zhang; Xiyun He; Pingsun Qiu; Aili Ding
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Paper Abstract

Crack free PLZT (9/65/35) thin films were prepared by a metallic organic decomposition (MOD) process on Pt(111)/Ti/SiO2/Si(100) and sapphire(001) substrates respectively. The films on Pt/Ti/SiO2/Si substrates present highly (111)-preferred orientation while they display highly (110)-preferred orientation on sapphire substrates. The microstructure of the films were investigated and discussed. Ferroelectric properties of PLZT thin films on Pt/Ti/SiO2/Si(100) substrates have been studied. Typical slim polarization-electric field hysteresis loops were observed. As the film thickness increasing, the remanent polarization Pr increases and the coercive electric field Ec drops. The influence of film thickness on optical transmittance and refractive index nr were examined by the films deposited on sapphire substrates. The nr at 510nm wavelength shows an increasing tendency with film thickness increasing. Great stress aggregated during the film processing is thought to be an important reason which results in the variations of optical properties dependent on the film thickness.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607367
Show Author Affiliations
Yong Zhang, Jingdezhen Institute of Ceramics (China)
Shanghai Institute of Ceramics, CAS (China)
Xiyun He, Shanghai Institute of Ceramics, CAS (China)
Pingsun Qiu, Shanghai Institute of Ceramics, CAS (China)
Aili Ding, Shanghai Institute of Ceramics, CAS (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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