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Proceedings Paper

Preparation and characterization of chemically deposited SnS thin films
Author(s): Jing Xu; Guangpu Wei; Weiming Shi; Pengfei Chen; Yuchun Xue
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Paper Abstract

Tin Sulphide is a promising material for use in solar cell with its suitable band gap energy and high absorption coefficient. In this paper, we prepared thin films of SnS by chemical bath deposition and annealed them at 300°C in N2 atmosphere. The SnS thin films were characterized structurally, optically and electrically. XRD shows the as-prepared film had orthorhombic crystal structure, exhibited Sn-rich composition and partially transformed to SnO2-xby thermal treatment. The absorption was found to be as high as 105cm-1for the photon energy above 1.55eV and the optical band gap was estimated to be 1.45eV from the transmittance spectra. The dark-and photo-conductivity were also calculated from the I-V curves of the as-prepared and thermal-treated films.

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607284
Show Author Affiliations
Jing Xu, Shanghai Univ. (China)
Guangpu Wei, Shanghai Univ. (China)
Weiming Shi, Shanghai Univ. (China)
Pengfei Chen, Shanghai Univ. (China)
Yuchun Xue, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

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