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Proceedings Paper

Thin films in silicon carbide semiconductor devices
Author(s): Mikael Ostling; Sang-Mo Koo; Sang-Kwon Lee; Carl-Mikael Zetterling; Alexander Grishin
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Paper Abstract

Silicon carbide (SiC) semiconductor devices have been established during the last decade as very useful high power, high speed and high temperature devices because of their inherent outstanding semiconductor materials properties. Due to its large band gap, SiC possesses a very high breakdown field and low intrinsic carrier concentration, which accordingly makes high voltage and high temperature operation possible. SiC is also suitable for high frequency device applications, because of the high saturation drift velocity and low permittivity. Thin film technology for various functions in the devices has been heavily researched. Suitable thin film technologies for Ohmic and low-resistive contact formation, passivation and new functionality utilizing ferroelectric materials have been developed. In ferroelectrics, the spontaneous polarization can be switched by an externally applied electric field, and thus are attractive for non-volatile memory and sensor applications. A novel integration of Junction-MOSFETs (JMOSFETs) and Nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is realized. SiC JMOSFET controls the drain current effectively from the buried junction gate thereby allowing for a constant current level at elevated temperatures. SiC NVFET has similar functions with non-volatile memory capability due to ferroelectric gate stack, which operated up to 300°C with memory function retained up to 200°C.

Paper Details

Date Published: 8 December 2004
PDF: 6 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607264
Show Author Affiliations
Mikael Ostling, Royal Institute of Technology (Sweden)
Sang-Mo Koo, Royal Institute of Technology (Sweden)
Sang-Kwon Lee, Royal Institute of Technology (Sweden)
Carl-Mikael Zetterling, Royal Institute of Technology (Sweden)
Alexander Grishin, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications

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