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Proceedings Paper

Resist blur and line edge roughness (Invited Paper)
Author(s): Gregg M. Gallatin
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Paper Abstract

A straightforward analytic model of resist line edge roughness is presented which predicts all the known scaling laws as well as the shape of the experimentally seen frequency content or power spectrum of the roughness. The model implies there are strong basic limitations to achieving, simultaneously, low roughness, low dose and high resolution in any standard chemically amplified resist process. A simple model of how roughness maps to device performance is also presented.

Paper Details

Date Published: 12 May 2004
PDF: 15 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.607233
Show Author Affiliations
Gregg M. Gallatin, IBM T.J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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