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Proceedings Paper

Passivation of MBE grown GaInSb/InAs superlattice photodiodes
Author(s): Cory J. Hill; Sam S. Keo; Jason M. Mumolo; Sarath D. Gunapala
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Paper Abstract

We have performed wet chemical passivation tests on GaInSb/InAs superlattice photodiode structures grown by molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

Paper Details

Date Published: 31 May 2005
PDF: 6 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.606941
Show Author Affiliations
Cory J. Hill, Jet Propulsion Lab. (United States)
Sam S. Keo, Jet Propulsion Lab. (United States)
Jason M. Mumolo, Jet Propulsion Lab. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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