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Proceedings Paper

Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplification
Author(s): Harris P. Moyer; Tsung-Yuan Hsu; R. L. Bowen; Y. K. Boegeman; P. W. Deelman; S. Thomas; Andrew T. Hunter; Joel N. Schulman; Arttu Luukanen; Erich N. Grossman
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Paper Abstract

The figure of merit for RF detectors, noise-equivalent power (NEP), is determined by the noise divided by the sensitivity. Thus, the challenge is to design a diode structure that has low junction resistance while maintaining a large nonlinearity. This work presents sensitivity and noise measurements for Sb-heterostructure backward diodes with varying barrier thicknesses and cross-sectional areas. Nominal diode areas are 2x2mm2 and 3x4mm2 with 15Å and 20Å barriers. The best NEP measured to date is 1.19 pW/rtHz at 36.5 GHz.

Paper Details

Date Published: 19 May 2005
PDF: 9 pages
Proc. SPIE 5789, Passive Millimeter-Wave Imaging Technology VIII, (19 May 2005); doi: 10.1117/12.606730
Show Author Affiliations
Harris P. Moyer, HRL Labs., LLC (United States)
Tsung-Yuan Hsu, HRL Labs., LLC (United States)
R. L. Bowen, HRL Labs., LLC (United States)
Y. K. Boegeman, HRL Labs., LLC (United States)
P. W. Deelman, HRL Labs., LLC (United States)
S. Thomas, HRL Labs., LLC (United States)
Andrew T. Hunter, HRL Labs., LLC (United States)
Joel N. Schulman, HRL Labs., LLC (United States)
Arttu Luukanen, National Institute of Standards and Technology (United States)
Erich N. Grossman, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 5789:
Passive Millimeter-Wave Imaging Technology VIII
Roger Appleby; David A. Wikner, Editor(s)

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