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Proceedings Paper

Spin-polarized semiconductor light sources
Author(s): Pallab Bhattacharya; Michael Holub; Jonghyun Shin; Subhananda Chakrabarti
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Paper Abstract

Spin-polarized light-emitting diodes and lasers are a promising technology for future high-speed optical communications with enhanced bandwidth and security. In such devices, circularly-polarized emission results from radiative recombination of spin-polarized carriers, which are injected from either a ferromagnetic metallic contact or magnetic semiconductor. Here we discuss the epitaxial growth and application of III-Mn-V diluted magnetic semiconductors and their nanostructures as injector layers in spin-polarized, surface-emitting diodes and lasers. A high polarization efficiency of 30% at 4.5 K is demonstrated in spin-LEDs having GaMnAs spin-injector layers and high-temperature operation (T < 180 K) is observed in spin-LEDs having a GaAs spin injector embedded with Mn-doped InAs quantum dot nano-magnets. Spin-polarized vertical cavity surface-emitting lasers having thin GaMnAs spin-injector layers have also been investigated.

Paper Details

Date Published: 4 April 2005
PDF: 14 pages
Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); doi: 10.1117/12.606609
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Michael Holub, Univ. of Michigan (United States)
Jonghyun Shin, Univ. of Michigan (United States)
Subhananda Chakrabarti, Univ. of Michigan (United States)

Published in SPIE Proceedings Vol. 5734:
Quantum Dots, Nanoparticles, and Nanoclusters II
Diana L. Huffaker; Pallab K. Bhattacharya, Editor(s)

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