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Proceedings Paper

Optical considerations of high-resolution photomask phase metrology
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Paper Abstract

We discuss the major challenges facing interferometric metrology and review several optical architectures that have evolved to meet the demands of the photolithography industry. Reliable image formation at extreme values of k1 requires the precise characterization of advanced photomasks, which may themselves contain near- and sub-illumination-wavelength feature sizes. The limitations of available photomask phase metrology tools have driven the development of a new actinic phase metrology architecture that facilitates optical path difference measurements of isolated or dense features on a sub-200-nm spatial scale. We describe the optical considerations that affect optical photomask metrology, and illustrate the new coherent-probe technique with preliminary results obtained using a leading-edge chromeless-phase lithography (CPL) reticle and a high-resolution actinic 193-nm microscope.

Paper Details

Date Published: 10 May 2005
PDF: 10 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.606107
Show Author Affiliations
A. J. Merriam, Actinix (United States)
J. J. Jacob, Actinix (United States)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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