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Proceedings Paper

Field-induced THz wave emission with nanometer resolution
Author(s): Tao Yuan; Hongkyu Park; Jingzhou Xu; Haewook Han; X.-C. Zhang
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Paper Abstract

A scanning near-field microscope provides nano-scale imaging capability of field induced THz wave emission spectra from semiconductor surfaces and interfaces. Combined with a scanning probe tip and femtosecond optical pulse excitation, THz wave emission with sub-100 nm spatial resolution has been demonstrated. The scanning probe tip modulates semiconductor surface field with nano-scale accuracy through the imaging charge dipole, the tunneling current, or the contact current. The modulated THz wave from the highly localized area under the scanning tip is detected in time-domain. This aperture-less imaging method leads the way to study nano-scale to atomic level emission spectroscopy at THz frequency range.

Paper Details

Date Published: 28 February 2005
PDF: 8 pages
Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); doi: 10.1117/12.606025
Show Author Affiliations
Tao Yuan, Rensselaer Polytechnic Institute (United States)
Hongkyu Park, Rensselaer Polytechnic Institute (United States)
Pohang Univ. of Science and Technology (South Korea)
Jingzhou Xu, Rensselaer Polytechnic Institute (United States)
Haewook Han, Rensselaer Polytechnic Institute (United States)
Pohang Univ. of Science and Technology (South Korea)
X.-C. Zhang, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 5649:
Smart Structures, Devices, and Systems II
Said F. Al-Sarawi, Editor(s)

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