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Proceedings Paper

Investigation into the modeling of field-effect mobility in disordered organic semiconductors
Author(s): H. L. Kwok
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Paper Abstract

Organic semiconductors have attracted significant interest because of their potential application in electronic devices. One of the most important parameters in such an application is the carrier mobility, which is low when compared with the inorganic semiconductors. In the past, significant effort has been spent to produce high mobility organic semiconductors, even though the best room temperature value reported is only a few cm2/V.s. In this work, we examined the field-effect carrier mobility in pentacene by correlating reported data on polycrystalline samples with simulations based on the correlated disorder model (CDM). Using the rms width of the density of states (DOS) as the variable, we were able to produce a good match. Our results suggested that the carrier mobility in polycrystalline pentacene might be primarily dependent on σ, the rms width of the DOS. Furthermore, a parameter extraction scheme was proposed and applied to pentacene data reported in the literature.

Paper Details

Date Published: 28 June 2005
PDF: 10 pages
Proc. SPIE 5838, Nanotechnology II, (28 June 2005); doi: 10.1117/12.605541
Show Author Affiliations
H. L. Kwok, Univ. of Victoria (Canada)


Published in SPIE Proceedings Vol. 5838:
Nanotechnology II
Paolo Lugli; Laszlo B. Kish; Javier Mateos, Editor(s)

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