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Proceedings Paper

High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
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Paper Abstract

We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 μm up to 32 μm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays will be presented.

Paper Details

Date Published: 31 May 2005
PDF: 12 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.605291
Show Author Affiliations
M. Razeghi, Northwestern Univ. (United States)
Y. Wei, Northwestern Univ. (United States)
A. Gin, Northwestern Univ. (United States)
A. Hood, Northwestern Univ. (United States)
V. Yazdanpanah, Northwestern Univ. (United States)
M. Z. Tidrow, Missile Defense Agency (United States)
V. Nathan, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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