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Proceedings Paper

Electron transport in bulk and multiquantum barrier AlxGa1-xInP/GaInP n-i-n diodes
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Paper Abstract

The I-V characteristics of AlGaInP/GaInP bulk and multiquantum barrier n-i-n diodes between 20 and 300 K were measured with pA current resolution. When analysed using a thermionic emission model, measured activation energies in the bulk structures were close to the expected conduction band offset. The interplay of other transport mechanisms, including Fowler-Nordheim tunneling and Poole-Frenkel emission was investigated in both the bulk and multiquantum barrier diodes. Transition points between different regimes were observed. Similarities and differences were observed for the bulk and multiquantum barrier diodes. Measured Fowler-Nordheim barrier heights in the bulk barrier diodes agree well with those derived from simulations except in the case of the indirect material at forward bias.

Paper Details

Date Published: 3 June 2005
PDF: 10 pages
Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); doi: 10.1117/12.605141
Show Author Affiliations
Joanne Ni Chroinin, Univ. College Cork (Ireland)
Alan P. Morrison, Univ. College Cork (Ireland)


Published in SPIE Proceedings Vol. 5825:
Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks
Gerald Farrell; David M. Denieffe; Liam Barry; John Gerard McInerney; Harold S. Gamble; Padraig Hughes; R. Alan Moore, Editor(s)

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