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Proceedings Paper

Device design of 1.3μm AlGaInAs-InP narrow strip structure for self-pulsation operation
Author(s): Guan Hong Wu; Canice G. O'Brien; Woon-Ho Seo; John F. Donegan
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Paper Abstract

A complete design of 1.3 μm AlGaInAs/InP narrow stripe semiconductor lasers for self-pulsating operation is realised by using a 2×1D simulation model. This numerical model is based on the effective index method and self-sustained pulsation mechanism in the narrow stripe lasers. The self-pulsation effect is enhanced by the self focusing and defocusing of the optical field which is dependent on the modification of carrier densities in the active region. The resulting AlGaInAs-InP device with compressively strained multi-QWs showed self-pulsation frequency of 3.5 GHz.

Paper Details

Date Published: 3 June 2005
PDF: 11 pages
Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); doi: 10.1117/12.605139
Show Author Affiliations
Guan Hong Wu, Univ. of Dublin, Trinity College (Ireland)
Canice G. O'Brien, Univ. of Dublin, Trinity College (Ireland)
Woon-Ho Seo, Sungkyunkwan Univ. (South Korea)
John F. Donegan, Univ. of Dublin, Trinity College (Ireland)


Published in SPIE Proceedings Vol. 5825:
Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks
John Gerard McInerney; Harold S. Gamble; Gerald Farrell; David M. Denieffe; Padraig Hughes; R. Alan Moore; Liam Barry, Editor(s)

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