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Proceedings Paper

2 x 64 GaAs readout for IR FPA application
Author(s): Lester J. Kozlowski; Robert E. Kezer
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Paper Abstract

A high-speed 2 x 64 GaAs readout with direct injection input has been demonstrated. The readout was fabricated in E/D MESFET technology and is intended for hybridization to photovoltaic detector arrays, specifically PV HgCdTe, for use at long wavelength infrared (LWIR) backgrounds (greater than 5 x 10 exp 15 photons/sq cm). System-limited data rate of 50 MHz was achieved at reasonable power dissipation of not greater than 125 mW. Enhancement-mode MESFETs in both implanted and heterostructure E/D MESFET structures were observed to have low 1/f noise and high subthreshold ideality. The noise spectral density of superlattice-buffered heterostructure E-MESFETs operating at drain current of 500 nA (nominal tactical LWIR detector current) was typically about 2 micro-V/Hz exp 1/2 at 1 Hz, which is comparable to silicon NMOS. This is lower than needed for background limited IR photodetector focal plane array sensitivity.

Paper Details

Date Published: 1 July 1992
PDF: 8 pages
Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60501
Show Author Affiliations
Lester J. Kozlowski, Rockwell International Science Ctr. (United States)
Robert E. Kezer, Valley Oak Semiconductor (United States)


Published in SPIE Proceedings Vol. 1684:
Infrared Readout Electronics
Eric R. Fossum, Editor(s)

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