Share Email Print
cover

Proceedings Paper

Evaluation of GaAs FETs for cryogenic readout
Author(s): Randall K. Kirschman; Sony V. Lemoff; John A. Lipa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Low-frequency, low-noise, low-power cryogenic electronics to read out photodetectors is being investigated for the star-tracking telescope of the Gravity Probe B spacecraft. We report our initial findings from evaluating more than 20 types of GaAs FETs, both commercial and non-commercial, for this application. Most exhibit useable dc characteristics at cryogenic temperatures, although gate leakage and hysteretic effects (presumably due to charge trapping) could be troublesome. Low-frequency noise (based primarily on grounded-gate measurements) at 4 K is '1/f-like' and for the quietest GaAs FETs appears to be at least as low as the lowest noise values reported for Si MOSFETs at 4 K. Further investigation is needed in several areas.

Paper Details

Date Published: 1 July 1992
PDF: 21 pages
Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60500
Show Author Affiliations
Randall K. Kirschman, Stanford Univ. (United States)
Sony V. Lemoff, Stanford Univ. (United States)
John A. Lipa, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 1684:
Infrared Readout Electronics
Eric R. Fossum, Editor(s)

© SPIE. Terms of Use
Back to Top