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Proceedings Paper

Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K
Author(s): Thomas J. Cunningham; Eric R. Fossum; Steven M. Baier
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Paper Abstract

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 5K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.

Paper Details

Date Published: 1 July 1992
PDF: 9 pages
Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); doi: 10.1117/12.60498
Show Author Affiliations
Thomas J. Cunningham, Jet Propulsion Lab. (United States)
Eric R. Fossum, Jet Propulsion Lab. (United States)
Steven M. Baier, Honeywell Systems and Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1684:
Infrared Readout Electronics
Eric R. Fossum, Editor(s)

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