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Proceedings Paper

Delta doping for deep-level analysis in semiconductor diodes
Author(s): Joachim Piprek; H. Kostial; Peter Krispin; C. H. Lange; Karl W. Boer
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Paper Abstract

Recombination via deep level centers within a delta doped sheet in GaAs diodes is investigated as a function of deep level energy and local sheet position within the junction. Current-density versus voltage (jV) characteristics of pn-junctions are calculated varying the sheet position and energy of a single level, and a double level deep center (Ti). With homogeneous photogeneration, the changes in open circuit voltage Voc and fill factor of photodiodes are determined as a function of such delta doping. Schottky barriers on MBE-grown GaAs with a planar thin Ti doped sheet are examined by capacitance-voltage (CV) measurements. The corresponding charge profiles N(W) are compared with modeling results.

Paper Details

Date Published: 1 July 1992
PDF: 12 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60491
Show Author Affiliations
Joachim Piprek, Humboldt-Univ. Berlin (Germany)
H. Kostial, Paul-Drude-Institut fuer Festkoerperelektronik Berlin (Germany)
Peter Krispin, Paul-Drude-Institut fuer Festkoerperelektronik Berlin (Germany)
C. H. Lange, Paul-Drude-Institut fuer Festkoerperelektronik Berlin (Germany)
Karl W. Boer, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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