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Proceedings Paper

Highly efficient THz modulation using optically excited silicon
Author(s): Canan Karaalioglu; I-Chun Anderson Chen; Martin Brucherseifer; Azza Meshal; Rainer Martini
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Paper Abstract

Optically controlled modulation of broadband THz radiation with a comparably uniform spatial distribution is demonstrated in a Si-based semiconductor structure with moderate doping. Using THz Time-Domain Spectroscopy a maximum intensity modulation of more than 99% was demonstrated for a spectrum ranging from 50GHz to 3.5THz with 3dB attenuation already for optical excitation as low as only 5mW. The uniformity of the modulation was measured and compared to the THz beam profile.

Paper Details

Date Published: 18 May 2005
PDF: 8 pages
Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); doi: 10.1117/12.604897
Show Author Affiliations
Canan Karaalioglu, Stevens Institute of Technology (United States)
I-Chun Anderson Chen, Stevens Institute of Technology (United States)
Martin Brucherseifer, Stevens Institute of Technology (United States)
Azza Meshal, U.S. Army CECOM (United States)
Rainer Martini, Stevens Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5790:
Terahertz for Military and Security Applications III
R. Jennifer Hwu; Dwight L. Woolard; Mark J. Rosker, Editor(s)

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