Share Email Print

Proceedings Paper

Theoretical and experimental results for a quantum-well resonant cavity phototransistor
Author(s): Sonu L. Daryanani; Geoffrey W. Taylor
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A quantum well resonant cavity structure is modelled using energy balance considerations by computing the Poynting vectors across the absorbing region. The quantum efficiency (eta) is shown to yield terms that depend on the Q of the cavity, the position of the quantum wells in the structure, and the relative reflectivities of the two stacks at either end of the cavity. The bandwidth B.W. of the detector on the other hand depends only on the cavity Q. Thus an optimum (eta) X B.W. product can be found. Experimental results corroborate the model.

Paper Details

Date Published: 1 July 1992
PDF: 19 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60487
Show Author Affiliations
Sonu L. Daryanani, AT&T Bell Labs. and Univ. of Bradford (United States)
Geoffrey W. Taylor, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

© SPIE. Terms of Use
Back to Top