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Proceedings Paper

Hole burning and population pulsations in semiconductor laser media (Invited Paper)
Author(s): Murray Sargent
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Paper Abstract

Interactions of sidemodes in a semiconductor gain medium in the presence of an oscillating mode are studied both for beat frequencies comparable to interband relaxation rates as well as those comparable to intraband relaxation rates. The former applies to the complete many-body theory, provided the strong mode Rabi frequency is small compared to the intraband relaxation rates. Population pulsations play an important role in both cases, with spectral hole burning playing an equally important role for the large beat frequency case.

Paper Details

Date Published: 1 July 1992
PDF: 12 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60483
Show Author Affiliations
Murray Sargent, Optical Sciences Ctr./Univ. of Arizona (United States)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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