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Proceedings Paper

Temperature dependence of semiconductor lasers (Invited Paper)
Author(s): Anthony F. J. Levi; James O'Gorman; Stefan Schmitt-Rink; Tawee Tanbun-Ek; Debbie L. Coblentz; Ralph A. Logan
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Paper Abstract

For many years it has been assumed that nonradiative recombination plays a dominant role in determining the high temperature performance of long wavelength laser diodes. We show that this view is inconsistent with the measured temperature dependence of spontaneous emission from light emitting diodes. We conclude that net gain primarily determines the temperature sensitivity of threshold in long wavelength semiconductor lasers.

Paper Details

Date Published: 1 July 1992
PDF: 11 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60480
Show Author Affiliations
Anthony F. J. Levi, AT&T Bell Labs. (United States)
James O'Gorman, AT&T Bell Labs. (United States)
Stefan Schmitt-Rink, Philipps Univ. (United States)
Tawee Tanbun-Ek, AT&T Bell Labs. (United States)
Debbie L. Coblentz, AT&T Bell Labs. (United States)
Ralph A. Logan, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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