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Proceedings Paper

Mobility of electrons and holes in semiconductors (Invited Paper)
Author(s): Gerald D. Mahan; B. A. Sanborn; P. B. Allen
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Paper Abstract

The mobility of electrons and holes is calculated in silicon as a function of temperature and the concentration of impurities. Calculations are done for both majority and minority carriers. Special care has been taken in the calculation of the contribution from impurity scattering. Both the dielectric function, and the local field corrections, have been calculated as a function of temperature and impurity concentration. The results agree with the data at low temperature, and at high doping at room temperature.

Paper Details

Date Published: 1 July 1992
PDF: 10 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60479
Show Author Affiliations
Gerald D. Mahan, Univ. of Tennessee and Oak Ridge National Lab. (United States)
B. A. Sanborn, SUNY/Stony Brook (United States)
P. B. Allen, SUNY/Stony Brook (United States)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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