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Proceedings Paper

Collector-controlled states in charge injection transistors (Invited Paper)
Author(s): Serge Luryi; Mark R. Pinto
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Paper Abstract

We review recent theoretical studies of the symmetry properties of charge injection transistors. These studies, based on continuation modeling and transient device simulation, incorporate self-consistently the electron energy and real-space transfer currents over heterojunction interfaces. Inspection of the full device phase—space reveals a variety of instabilities and a striking novelty of multiply-connected current-voltage characteristics. We have found anomalous steady states in which hot-electron injection occurs in the absence of any voltage between the emitter electrodes. In these states, some of which are not only stationary but also stable with respect to small perturbations, the electron heating is due to the fringing field from the collector electrode. Some of the anomalous states break the reflection symmetry in the plane normal to the channel at midpoint. The study elucidates the formation of hot-electron domains in real-space transfer.

Paper Details

Date Published: 1 July 1992
PDF: 12 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60475
Show Author Affiliations
Serge Luryi, AT&T Bell Labs. (United States)
Mark R. Pinto, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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