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Proceedings Paper

Approximate reflection algorithms
Author(s): Witold Bardyszewski; David Yevick; Moses Glasner; Bjorn Hermansson
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Paper Abstract

We review our photoluminescence results concerning the structural disorder of the interfaces in GaAs/AlAs quantum well structures. In the highest quality samples structural disorder exists as monolayer—high islands. We show the types of possible luminescence spectra which can occur in quantum wells in which the bottom and top interfaces have differently-sized islands. It is shown how luminescence spectra are sensitive to both large and small island structures —whether they occur on the same interface or occur separately on the top and bottom interfaces.

Paper Details

Date Published: 1 July 1992
PDF: 8 pages
Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); doi: 10.1117/12.60474
Show Author Affiliations
Witold Bardyszewski, Queen's Univ. at Kingston and Warsaw Univ. (Canada)
David Yevick, Queen's Univ. at Kingston (Canada)
Moses Glasner, The Pennsylvania State Univ. (United States)
Bjorn Hermansson, Telia Research (Sweden)

Published in SPIE Proceedings Vol. 1679:
Physics and Simulation of Optoelectronic Devices
David Yevick, Editor(s)

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