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Dielectric functions and critical point transitions of single strained and relaxed InxGa1-xAs/GaAs epilayers studied by spectroscopic ellipsometry and photoreflectance
Author(s): Roger Timothy Carline; Christopher Pickering; N. S. Garawal; David Lancefield; Leslie K. Howard; M. T. Emeny
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Paper Abstract

Dielectric functions of strained InxGa1-xAs (x approximately 0.1, 0.2, 0.24) measured by spectroscopic ellipsometry are presented for the first time. Critical point transition energies obtained from differential spectra are correlated with photoreflectance measurements to provide information on layer thickness, composition, and strain.

Paper Details

Date Published: 1 July 1992
PDF: 11 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60463
Show Author Affiliations
Roger Timothy Carline, Royal Signals and Radar Establishment (United Kingdom)
Christopher Pickering, Royal Signals and Radar Establishment (United Kingdom)
N. S. Garawal, Univ. of Surrey (United Kingdom)
David Lancefield, Univ. of Surrey (United Kingdom)
Leslie K. Howard, Univ. of Surrey (United Kingdom)
M. T. Emeny, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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