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Proceedings Paper

Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs
Author(s): Hongen Shen; Jagadeesh Pamulapati; Robert A. Lux; Mitra B. Dutta; F. C. Rong; Monica Alba Taysing-Lara; L. Fotiadis; L. Calderon; Yicheng Lu
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Paper Abstract

The Fermi level position in low temperature (LT) GaAs is studied by photoreflectance (PR). The experiments show that the Fermi level in both the as-grown and the annealed LT-GaAs is firmly pinned, however, the pinning position occurs at different energies: 0.47 eV below the conduction band edge for the as-grown samples and 0.65 eV below the conduction band edge for the annealed samples. The pinning in the as-grown LT-GaAs is the result of a high degree of charge compensation of deep levels, while the pinning in the annealed LT-GaAs is due to the depletion of carriers by the Schottky barrier at the metallic As precipitates. From the measured Fermi level and ionization ratio of As antisites, the (0/+) donor level of the As antisite is found to be at Ec - 0.57 eV.

Paper Details

Date Published: 1 July 1992
PDF: 10 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60458
Show Author Affiliations
Hongen Shen, U.S. Army Electronics Technology and Devices Lab. (United States)
Jagadeesh Pamulapati, U.S. Army Electronics Technology and Devices Lab. (United States)
Robert A. Lux, U.S. Army Electronics Technology and Devices Lab. (United States)
Mitra B. Dutta, U.S. Army Electronics Technology and Devices Lab. (United States)
F. C. Rong, U.S. Army Electronics Technology and Devices Lab. (United States)
Monica Alba Taysing-Lara, U.S. Army Electronics Technology and Devices Lab. (United States)
L. Fotiadis, U.S. Army Electronics Technology and Devices Lab. (United States)
L. Calderon, Rutgers Univ. (United States)
Yicheng Lu, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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