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Proceedings Paper

Direct measurement of the piezoelectric field and Fermi level pinning in [111]B grown InGaAs/GaAs heterostructures
Author(s): Mitra B. Dutta; Hongen Shen; Jagadeesh Pamulapati; Wayne H. Chang; Michael A. Stroscio; Xiaoqiang Zhang; D. M. Kim; K. W. Chung; P. Paul Ruden; Marshall I. Nathan
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Paper Abstract

We report the first photoreflectance measurement of strain-induced piezoelectric field in a (111)B InGaAs/GaAs structure. The InGaAs quantum well was pseudomorphically grown in the undoped regions of a GaAs undoped-heavily doped structure. Four structures, two each with the same layer structures but different orientation, (111)B and (100), were used in this study. The electric fields in the undoped GaAs region were measured by Franz-Keldysh oscillations in photoreflectance. All the samples have a surface barrier height of about 0.7 eV. However, the measured electric field is 30% stronger in the (111)B sample compared to the (100) sample. We attribute this difference to the strain induced electric field in the (111)B sample. The piezoelectric field in (111)B strained In0.15Ga0.85As obtained in this measurement is 2.2 +/- 0.5 X 105 V/cm, which agrees very well with theory.

Paper Details

Date Published: 1 July 1992
PDF: 8 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60457
Show Author Affiliations
Mitra B. Dutta, U.S. Army Electronics Technology and Devices Lab. (United States)
Hongen Shen, U.S. Army Electronics Technology and Devices Lab. (United States)
Jagadeesh Pamulapati, U.S. Army Electronics Technology and Devices Lab. (United States)
Wayne H. Chang, U.S. Army Electronics Technology and Devices Lab. (United States)
Michael A. Stroscio, U.S. Army Research Office (United States)
Xiaoqiang Zhang, Duke Univ. (United States)
D. M. Kim, Univ. of Minnesota/Twin Cities (United States)
K. W. Chung, Univ. of Minnesota/Twin Cities (United States)
P. Paul Ruden, Univ. of Minnesota/Twin Cities (United States)
Marshall I. Nathan, Univ. of Minnesota/Twin Cities (United States)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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