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Proceedings Paper

Correlation between electric field, temperature, and carrier concentration with respect to photoreflectance lineshape at the E1 transition of GaAs
Author(s): Alireza Badakhshan; C. Durbin; Robert Glosser; Kambiz Alavi; S. Nicholas; D. Dale; Kenneth Capuder
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Paper Abstract

We extend our previous measurements of the lineshape of GaAs at the E1 transition (2.9 eV). This study covers the combined effect of temperature and carrier concentration along with a discussion of the effect of the electric field intensity and the field inhomogeneity within a depth of 20 nm from the surface. A systematic study of changes in the lineshape of the above bandgap transition, E1 as a function of temperature (80 - 400 K) and carrier concentration (CC) (2 - 200 X 1016cm-3umps with different penetration depths, so that the modulation has a gradient with respect to the depth within the sample. The application of this technique is demonstrated for a two-dimensional electron gas (2DEG) of a modulation doped heterojunction in comparison with conventional PR. In one case the heterojunction of interest was buried under two highly doped GaAs and AlGaAs layers 40 nm thick. We show that this heterojunction is barely distinguishable in a PR measurement. Nevertheless, at room temperatutric field on the photoreflectance lineshape is discussed. The observed effect may be applied as an optical measurement of the electric field and the carrier concentration within a depth of about 17 nm from the surface/interface.

Paper Details

Date Published: 1 July 1992
PDF: 9 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60456
Show Author Affiliations
Alireza Badakhshan, Univ. of Minnesota/Duluth (United States)
C. Durbin, Univ. of Texas/Dallas (United States)
Robert Glosser, Univ. of Texas/Dallas (United States)
Kambiz Alavi, Univ. of Texas/Arlington (United States)
S. Nicholas, Univ. of Minnesota/Duluth (United States)
D. Dale, Univ. of Minnesota/Duluth (United States)
Kenneth Capuder, EMCORE Corp. (United States)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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