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Proceedings Paper

Photoreflectance characteristics of AlGaAs/GaAs structures
Author(s): Bernard L. Weiss; Ahn Goo Choo; Howard E. Jackson
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Paper Abstract

Room temperature photoreflectance (PR) has been used to study a series of AlGaAs/GaAs heterostructures, which have been shown by electrical measurements to contain a two- dimensional electron gas (2-DEG), with varying carrier concentrations, mobilities, and structures. Oscillatory features in the PR spectra observed above the GaAs bandgap energy cannot be simply interpreted as Franz-Keldysh oscillations (FKO).

Paper Details

Date Published: 1 July 1992
PDF: 5 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60454
Show Author Affiliations
Bernard L. Weiss, Univ. of Cincinnati (United States)
Ahn Goo Choo, Univ. of Cincinnati (United States)
Howard E. Jackson, Univ. of Cincinnati (United States)

Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)

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