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Proceedings Paper

Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well
Author(s): Hao Qiang; Yufei S. Huang; Fred H. Pollak; G. D. Pettit; Jerry M. Woodall
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Paper Abstract

The photoreflectance lineshape of the 11H exciton peak in an In0.21Ga0.79As/GaAs single quantum well was measured from 10 K to 500 K. In contrast to the GaAs/GaAlAs system our 10 K data exhibited no `wings' and can be fit equally well by the first-derivative of a Gaussian or Lorentzian profile. The former is probably relevant since the well material is an alloy. These results indicate that care must be taken in associating spectra without pronounced `wings' with the Lorentzian profile. The temperature dependence of the 11H linewidth, which has been fit to a Bose-Einstein expression, yields important information about the quality of the material and interface. The variation of the energy of 11H with temperature agrees with that of bulk material.

Paper Details

Date Published: 1 July 1992
PDF: 12 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60453
Show Author Affiliations
Hao Qiang, CUNY/Brooklyn College (United States)
Yufei S. Huang, CUNY/Brooklyn College (United States)
Fred H. Pollak, CUNY/Brooklyn College (United States)
G. D. Pettit, IBM Thomas J. Watson Research Ctr. (United States)
Jerry M. Woodall, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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