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Proceedings Paper

Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation
Author(s): Howard E. Jackson; Ahn Goo Choo; Bernard L. Weiss; Joseph T. Boyd; Andrew J. Steckl; Peter Chen; Robert D. Burnham; Stephen C. Smith
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Paper Abstract

Raman scattering and low temperature photoluminescence (PL) have been used to characterize conventional ion beam (CIB) and focused ion beam (FIB) implanted multiple quantum well (MQW) structures. Lattice damage induced by both CIB and FIB implantation is studied by analyzing the peak position and the lineshape of the Raman spectra. CIB and FIB induced lattice damage was similar at lower doses, but for the highest dose the FIB induced significantly larger damage. Following implantation and rapid thermal annealing, all samples are compositionally mixed. PL spectra suggest that CIB and FIB implanted samples with the lowest dose behave in a manner similar to a lightly compensated semiconductor.

Paper Details

Date Published: 1 July 1992
PDF: 5 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60451
Show Author Affiliations
Howard E. Jackson, Univ. of Cincinnati (United States)
Ahn Goo Choo, Univ. of Cincinnati (United States)
Bernard L. Weiss, Univ. of Cincinnati (United States)
Joseph T. Boyd, Univ. of Cincinnati (United States)
Andrew J. Steckl, Univ. of Cincinnati (United States)
Peter Chen, Univ. of Cincinnati (United States)
Robert D. Burnham, Amoco Research Ctr. (United States)
Stephen C. Smith, Amoco Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)

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